PART |
Description |
Maker |
TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
MX29LV065 |
64M-Bit CMOS Flash Memory
|
Macronix
|
MX29LV065B |
64M-Bit CMOS Flash Memory
|
Macronix
|
MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420M |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
MX25U6435E |
64M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25L6439E MX25L6439EM2I10G |
64M-BIT [x 1 / x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25L6436E MX25L6436EM2I10G MX25L6436EZNI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
KM23V64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
5962-8766505YA 5962-8766503YA 5962-8766507UA 5962- |
Complete High-Speed CMOS, 12-Bit ADC CMOS, 8-Bit-Compatible, 12-Bit DAC CMOS 12-Bit Buffered Multiplying DACs 16-Bit Microprocessor 16位微处理
|
Electronic Theatre Controls, Inc.
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器(RAM400动态) 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp. NEC Corp.
|